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List of Jounal Titles
A to Z index of Journal Title. Choose a letter.
2002 Int Conf Simul Semicond Process Divice
- Perspectives in Microscopic Carrier Transport
- Integrated TCAD and ECAD Solutions-A Paradigm Shift
- Coupled-Field Modeling of Microdevices and Microsystems
- Surface Mobility in Silicon at Large Operating Temperature
- Simulation of DGSOI MOSFETs with a Schroedinger-Poisson Based Mobility Model
- Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs-Effects of Substrate Impurity
- Investigation of the Electron Mobility in Strained Si1-xGex at High Ge Composition
- A Strategy for Enabling Predictive TCAD in Development of sub-100nm CMOS Technologies
- On the Optimal Shape and Location of Silicided Source and Drain Contacts
- GIDL Simulation and Optimization for O.13.MU.m/1.5V Low Power CMOS Transistor Design
- TCAD Driven Drain Engineering for Hot Carrier Reduction of 3.3V I/O PMOSFET
- Circuit-Simulation Model of Gate-Drain-Capacitance Changes in Small-Size MOSFETs Due to High Channel-Field Gradients
- 2D Simulation of a Buried-Heterostructure Tunable Twin-Guide DFB Laser Diode
- A Comprehensive Simulation Study of Strained-Si/SiGe nMODFET Scaling for RF Applications
- Realistic Scaling Scenario for Sub-100nm Embedded SRAM Based on 3-Dimensional Interconnect Simulation
- On the Large-Signal CMOS Modeling and Parameter Extraction for RF Applications
- Drift-Diffusion-Based Modeling of the Non-Quasistatic Small-Signal Response for RF-MOSFET Applications
- THE PHYSICAL PHENOMENA RESPONSIBLE FOR EXCESS NOISE IN SHORT-CHANNEL MOS DEVICES
- Simulation of Substrate Currents
- Multiscale Simulation of Diffusion, Deactivation, and Segregation of Dopants-Ab-Initio to Continuum
- Integrated Atomistic Process and Device Simulation of Decananometre MOSFETs
- 3D MOSFET Simulation Considering Long-Range Coulomb Potential Effects for Analyzing Statistical Dopant-Induced Fluctuations Associated with Atomistic Process Simulator
- Transistor Width Dependence of LER Degradation to CMOS Device Characteristics
- Enhanced Advancing Front Delaunay Meshing in TCAD
- In-Advance CPU Time Analysis for Monte Carlo Device Simulations
- An Efficient Algorithm for 3D Interconnect Capacitance Extraction Considering Floating Conductors
- System Level Model of Damping Effects for Highly Perforated Torsional Microstructures
- A Novel CDM-like Discharge Effect During Human Body Model (HBM) ESD Stress
- Simulation Technique of Heating by Contact Resistance for ESD Protection Device
- Atomistic Simulation of RTA Annealing for Shallow Junction Formation characterizing both BED and TED
- Three-dimensional Triangle-based Simulation of Etching Processes
- Automatic Order Reduction of Thermo-Electric Model for Micro-Ignition Unit
- Numerical modeling of silicon film deposition in very-high-frequency plasma reactor
- Gate tunnelling and impact ionisation in sub 100 nm PHEMTs
- Extraction of 3D interconnect impedances using edge elements without gauge condition
- Impact of electron heat conductivity on electron energy flux
- Modeling of Ultra Shallow Junctions and Hybrid Source/Drain Profiles Annealed by Soak and Spike RTA
- Investigation of Magnetic Field Effects on Energy Gap for Nanoscale InAs/GaAs Semiconductor Ring Structures
- Self-Consistent Single-Particle Simulation
- Nanoelectronic 3-D (NEMO 3-D) Simulation of Multimillion Atom Quantum Dot Systems
- Characterization of Multi-Barrier Tunneling Diodes and Vertical Transistors using 2-D Device Simulation
- Hot-Carrier Energy Distribution Model and Its Application to the MOSFET Substrate Current
- Numerical simulation of a two-particle wave function in quantum wires
- Cross Validation of Quantum Simulations and Optical Measurements in Single Electron Memories with Silicon Nano-crystallites
- A Strategy to Enforce the Discrete Minimax Principle on Finite Element Meshes
- Wigner Transport through Tunneling Structures-Scattering Interpretation of the Potential Operator
- Simulation and Inverse Modeling of TEOS Deposition Processes Using a Fast Level Set Method
- Simulation of a "Well Tempered" SOI MOSFET using an Enhanced Hydrodynamic Transport Model
- Statistical Fluctuation Analysis by Monte Carlo Ion Implantation Method
- Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET
- A New Non-Pair Diffusion Based Dopant Pile-Up Model for Process Designers and Its Prediction Accuracy
- The Process Modeling Hierarchy: Connecting Atomistic Calculations to Nanoscale Behavior
- Monte Carlo Simulation of Consecutive Implants into SiO2 Capped Si
- Modeling of the Diffusion of Implanted Boron in Strained Si/Si1-xGex
- Technology Modeling for Emerging SOI Devices
- MOSFET Hot-Carrier Induced Gate Current Simulation by Self-Consistent Silicon/Oxide Monte Carlo Device Simulation
- A New Gate Current Model Accounting for a Non-Maxwellian Electron Energy Distribution Function
- Analysis of injection current with electron temperature for High-K gate stacks
- Hot carrier induced degradation due to multi-phonon mechanism analyzed by lattice and device Monte Carlo coupled simulation
- Finite Element Analysis of Stress Evolution in Si based Front and Back Ends Micro Structures
- An Adaptive Grid Approach for the Simulation of Electromigration Induced Void Migration
- A New SP(Simultaneous Polishing) Model for Copper CMP Process
- Quantum Transport Modeling in Nano-Scale Devices
- Simulation of direct source-to-drain tunnelling using the density gradient formalism: Non-equilibrium Green's function calibration
- Simulations of Ultrathin, Ultrashort Double-Gated MOSFETs with the Density Gradient Transport Model
- On Density-Gradient Modeling of Tunneling through Insulators
- Monte Carlo Simulation of Electron Transport in a Carbon Nanotube
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