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List of Jounal Titles
A to Z index of Journal Title. Choose a letter.
2005 Int Conf Simul Semicond Process Divice
- MOSFET Modeling Beyond 100nm Technology: Challenges and Perspectives
- TCAD Challenges in the Nanotechnology Era
- The R-.SIGMA. Method for Nanoscale-Device Analysis
- Simulation of Quantum Transport in Small Semiconductor Devices
- Gate Tunneling Current Fluctuations associated with Random Dopant Effects
- Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-.KAPPA. gate stack materials
- Effect of Discrete Dopant Distribution on MOSFETs Scaling into the Future
- Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices
- Statistics of Grain Boundaries in gate poly-Si
- Investigation of 6T SOI SRAM Cell Stability Including Quantum and Gate Direct Tunneling Effects by Three-dimensional Device Simulation
- DGSOI versus Bulk: A Quantum-Ballistic Study of 25nm nMOSFETs
- Device Behavior Modeling for Carbon Nanotube Silicon-On-Insulator MOSFETs
- Simulation Study of Reduced Self-Heating in Novel Thin-SOI Vertical Bipolar Transistors
- Implementation of ESD Protection in SOI Technology: A Simulation Study
- An Accurate Separation of Floating-Body and Self-Heating Effects for High-Frequency Characterization of SOI MOSFET's
- Molecular dynamics simulation of plasma-surface interactions during dry etching processes
- Atomistic Modeling for Retardation of Boron Diffusion and Dominant BmIn Clusters in Pre-doped Silicon
- Modeling Dopant Diffusion in Strained and Strain-Relaxed Epi-SiGe
- First-Principles Study of Interaction of As-Vacancy and Ring Mechanism of Diffusion under Presence of Ge in Si
- A Schroedinger-Poisson Solution of CNT-FET Arrays
- Low-Field Transport Model for Semiconducting Carbon Nanotubes
- Geometry-dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistors
- Characterization of 4H-SiC MOSFET Interface Trap Charge Density Using a First Principles Coulomb Scattering Mobility Model and Device Simulation
- ESD Protection Design Optimization Using a Mixed-Mode Simulation and Its Impact on ESD Protection Design of Power Bus Line Resistance
- Three Dimensional CMOS Image Sensor Cell Simulation and Optimization
- Time-Domain-Based Modeling of Carrier Transport in Lateral p-i-n Photodiode
- Measurement and Simulation of Interconnect Inductance in 90nm and Beyond
- Coupled Simulation of Device Performance and Heating of Vertically Stacked Three-Dimensional Integrated Circuits
- A Physics-Based TCAD Framework for the Noise Analysis of RF CMOS Circuits under the Large-Signal Operation
- Compact Modeling of Source-Side Injection Programming for 90nm-Node AG-AND Flash Memory
- Integrated Simulation Flow for Self-Consistent Manufacturability and Circuit Performance Evaluation
- A Unified Statistical Model for Inter-Die and Intra-Die Process Variation
- A Highly Efficient Statistical Compact Model Parameter Extraction Scheme
- Phenomenological model for "stress memorization" effect from a capped-poly process
- The Impact of Layout on Stress-Enhanced Transistor Performance
- Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation
- First-Principle Computation of Relaxation Times in Semiconductors for Low and High Electric Fields
- On the Tunneling Energy within the Full-Band Structure Approach
- Effects of Local Electric Field and Effective Tunnel Mass on the Simulation of Band-to-Band Tunnel Diode Model
- One-Dimensional Corrected Drift-Diffusion Model: McKelvey's Method Extended with Accelerated-Multi-Flux
- Threshold Voltage Model of Single Gate SOI MOSFETs Derived from Asymptotic Method
- Physical Modeling and Scaling Properties of 4H-SiC Power Devices
- Simulation of Spin-polarized Transport in GaAs/GaAlAs Quantum Well Considering Intersubband Scattering by the Monte Carlo Method
- Performance Analysis of Novel 600V Super-Junction Power LDMOS Transistors with Embedded P-Type Round Pillars
- Three-Dimensional Simulation of Stress Dependent Thermal Oxidation
- Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines
- Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs
- A 3D Charge Model for FinFETs with Ballistic Transport
- Simulation of Drain Current Reduction Caused by Process-Induced Stress
- A Fast Algorithm for 3-D Inductance Extraction Based on Investigation of Open-Circuit Current
- Modeling of energy capability of power devices with copper layer integration
- Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD
- Comparison of Different Approaches for the Simulation of Topography Evolution during Lithography Development
- Modeling of Tunneling Currents for Highly Degraded CMOS Devices
- Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon
- Computer Simulation of Germanium Nanowire Field Effect Transistors
- Analysis and Simulation of Self-Heating Effects on RF LDMOS Devices
- Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator
- Simulation Analysis of Series Resistance for SOI MOSFET in Nanometer Regime
- Linearity Analysis of RF LDMOS Devices Utilizing Harmonic Balance Device Simulation
- Doping Profile Effects on Device Characteristics of Nano-Scale MOSFETs
- Efficacy of the Thermalized Effective Potential Approach for Modeling Nano-Devices
- Forward Body-biased Single Halo MOS Devices for Low Voltage Analog Circuits
- Study of RF Performance for Graded-Channel SOI MOSFETs
- A Novel Single-Gated Strained CMOS Architecture: COSMOS
- Physics and Performance of Phase Change Memories
- Atomistic Modeling of Electron Transport in Self-Assembled Arene-Based Molecular Wires
- Electro-thermal Simulations of Nanoscale Transistors with Optical and Acoustic Phonon Heat Conduction
- Comprehensive numerical model for Phase-Change Memory simulations
- FinFET Source/Drain Profile Optimization Considering GIDL for Low Power Applications
- A 3-dimensional particle device simulator; HyDeLEOSMC and its application to a FinFET
- A Quantum-Mechanical Analysis of the Electrostatics in Multiple-Gate FETs
- A Full Newton Scheme for the Coupled Schroedinger, Poisson, and Density-gradient Equations
- Monte-Carlo Simulations of Performance Scaling in Strained-Si nMOSFETs
- A New Quasi Ballistic Model for Strained MOSFET.
- Joule Heating under Quasi-Ballistic Transport Conditions in Bulk and Strained Silicon Devices
- The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers
- Performance Enhancement of pMOSFETs Depending on Strain, Channel Direction, and Material
- Calibrated Mobility Corrections for Drift Diffusion Simulation of Strained MOSFET Devices.
- Exploring Transistor Width Effect on Stress-induced Performance Improvement in PMOSFET with SiGe Source/Drain
- Quantum Chemical Molecular Dynamics Analysis of the Effect of Intrinsic Defects and Strain on Dielectric Characteristic of Gate Oxide Films
- Strain-Induced Leakage Current in High-k Gate Oxides Simulated with First-Principles Calculation
- Atomistic simulations of long-range strain and spatial asymmetry effects in multimillion-atom single and double quantum dot nanostructures
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