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Papers of Technical Meeting on Electron Devices, IEE Japan

EDD-06

1-16.18-36

Isolating Process of Solution Processed OTFT and its Influence on Transistor Property
Fabrication of Liquid Crystal Display Panel driven by Bottom-contact-type OTFT
Control of LC Alignment by Low Energy Ion Irradiation to Polyimide Film-Application to IPS-LCD-
Investigation of surface alignment of liquid crystal cell using phase transition droplet method
New Measurement Method of Three Viscosities of N-type LC using VA mode Cells
Theoretical Analysis of Measurement Method of Viscosities of N-type Liquid Crystals
Controlling splay-to-bend transition using twist disclination method in OCB mode LCD
Design of High Transmittance LCD without Grayscale Inversion at Direction except Bend Alignment Plane of OCB cell
Analysis of optical characteristic of liquid crystal cells by PDH method
Super Wide-View Polarizer with Broad Wavelength Range for High Contrast Liquid Crystal Displays
Reduced Power Consumption in a Transflective Homogenious- LCD
An effect of dithering signal on overdrive and a noise suppressing method
Driving Quick-Response Liquid Powder Display Using Three Voltage Level Driver and Their Evaluation
Color Reproduction Method Using Conversion Matrices Distributed Unevenly by Taking Account of Color Difference in the Color Diagram
Lighting requirements for a room of "Home-Theater"
OLEDs with gravure printing method
Flexible Inorganic Thin-Film Electroluminescent Devices Using A Flexible Ceramic Substrate
Operation Characteristics of Thin-Film Electroluminescent Devices with Nanostructured ZnS:Mn Emission Layer
Red-Emitting Ba2ZnS3:Mn Thin Film Electroluminescent Devices Prepared by Electron-Beam Evaporation
Preparation of red emitting (Sr1-x,Bax)S:Eu thin film EL devices
Blue Luminescence from Eu-activated BaO-Based Multicomponent Oxide Phosphor Thin Films
Emission Characteristics of Chalcopyrite Phosphor Thin-Film
Luminescent properties of SrY2S4:Eu phosphor synthesized by solid phase reaction
Preparation of La2O2S:Eu thin film phosphor for NUV excitation
Luminescent properties of GaN:Zn phosphors synthesized by the two-stage vapor-phase method
Synthesis of GaN/AlN bilayer particles by the two-stage vapor phase method
Luminescent properties of (Sr1-xCax)Cl2:Eu phosphors
Luminescent properties of ZnS:Ce,Y phosphor
Excitation and luminescent characteristics of (Sr,Ba)3MgSi2O8:Eu'2+' blue phosphors
5-inch Full Color Graphite Nanofiber FED
Front Address Structure for AC PDPs
Engineering Challenge to Flexible Plasma Displays
24-Subfield Modified-Binary-Coded Light Emission Scheme for Reducing Dynamic False Contours on Plasma Displays
Lowering of Scan and Data Pulse Voltages in PDPs by Utilizing Self-Erase-Discharge Threshold
Influence of an impurity gas on electron transports coefficients in Ne/Xe gas mixture of an AC PDP.
37-46
Process Integration Technology and Device Characteristics of CMOS FinFET on Bulk Silicon Substrate with sub-10nm Fin Width and 20nm Gate Length
High Performance 30 nm Gate Bulk CMOSfor 45 nm Node with .SIGMA.-shaped SiGe-SD
Backward Graded Collector Structure to Linearize Collector Capacitance of HBTs and Derivation of a Minimum Condition for 3rd Order Inter Modulation Distortion
The Characteristics Improvement of GaN FET by Ion Implantation
Expecting Circuit and Device Technologies for Future Mobile Communication Systems
AlGaN/GaN Devices for Future Power Switching Systems
Undoped Thin Film FD-SOI CMOS with Source/Drain-to-Gate Non-overlapped Structure for Ultra Low Leak Applications
Technologies for Enhancing Linearity in InGaP HBT Power Amplifiers Used in Wireless Communications
Improvement of Electerical Characteristics by Lateral Scale-Down Technology Using Tungsten-Based Ohmic Structure on InP-based HEMTs
47-66
Numerical switching characteristics analysis of low voltage Trench MOSFET with floating-P layer
Gate Charge 20V Class Trench-aligning Lateral Power MOSFET
High density MOSBD (UMOS with built-in Trench Schottky Barrier Diode) for Synchronous Buck Converters
Design for Efficiency Improvement and Future prediction in Multi Chip Module for DC-DC Converter
Development of the 1200V Light Punch-Through (LPT)-CSTBT
A New Isolation Technique for High Breakdown Voltage Reverse Blocking IGBT
Mechanical stress dependence of power device electrical characteristics
Investigation of carrier streaming effect for the low spike fast IGBT turn-off
Efficiency Characteristics of Forward-Flyback Mixed Converter
Power Conversion Efficiency Characteristics of the Multi-Level AC/DC Converter Using BSIT for Battery Energy Storage System
IGBT Inverter control for Flash Welding-Process control combined with Inverter Flash control and Mechanical control-
A Study of Electric Power Smoothing for Battery of Stand-alone Natural Power System Using EDLC
Development of Power Electronics Circuits Simulation for Hybrid Vehicle Inverters
Evolution of Silicon Power Devices and Challenges to Material Limit[14]
2.7m.OMEGA.cm'2', 700V IEMOSFET on 4H-SiC carbon-face
Design and Fabrication of Buried Gate type SiC-SIT (BGSIT)
Analysis of dynamic avalanche phenomenon of PiN diode using He ion irradiation
Fabrication of static induction rectifiers with trench gate which are formed by orientation dependent-wet etching
Problems on the SRH Recombination Model and a Proposed Solution
67-74
Suppression of parasitic L-NPNTr action in Smart Power Technology using High Resistance (p--) Substrates
Improved dielectric isolation HVIC technology (SODI) by using PVSQ layer.
Breakthrough of on-resistance Si limit by Super 3D MOSFET under 100V breakdown voltage
High Performance and Reliability Power MOSFET for Automotive Application With Partially Thick Trench Gate Oxide Structure
Reduction of On-Resistance in Superjunction by Using the Carrier Mobility Modulation
200V Super Junction MOSFET Fabricated by Trench Filling Epitaxial Si Growth
20m.OMEGA.cm'2' 660V Super Junction MOSFETs Fabricated by Deep Trench Etching and Epitaxial Growth
15.5m.OMEGA.cm'2'-680V Superjunction MOSFET